Memory cell circuit and semiconductor structure therefore

Details Memory cell circuit and semiconductor structure therefore Memory cell circuit and semiconductor structure therefore

1975-10-30

1977-05-03

Cook, Daryl W.

Communications: electrical

Digital comparator systems

307238, 307279, 357 54, G11C 1140, H03K 500, H03K 326, H01L 2934

Patent

active

040217868

ABSTRACT:
A new and improved memory cell is provided which comprises a word line, a pair of bit lines, a pair of current sources each having a first side coupled to a corresponding one of the bit lines; and a bistable circuit means operatively coupled to the word line and to another side of each of the current sources, whereby the bistable circuit means assumes one stable state upon the application of a voltage on one bit line, and assumes another stable state upon the application of a voltage on the other bit line.
In addition, several embodiments of semiconductor structures are provided for the new and improved memory cell.

REFERENCES:
patent: 3540010 (1970-11-01), Heightley et al.
patent: 3548386 (1970-12-01), Bidwell et al.
patent: 3772660 (1973-11-01), Norman
patent: 3781828 (1973-12-01), Platt et al.
patent: 3909807 (1975-09-01), Fulton

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