Memory cell array with low resistance common source and high...

Details Memory cell array with low resistance common source and high... Memory cell array with low resistance common source and high...

2011-08-30

2011-08-30

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

Reexamination Certificate

active

08008645

ABSTRACT:
In the present resistive memory array, included are a substrate, a plurality of source regions in the substrate, and a conductor connecting the plurality of source regions, the conductor being positioned adjacent to the substrate to form, with the plurality of source regions, a common source. In one embodiment, the conductor is an elongated metal body of T-shaped cross-section. In another embodiment, the conductor is a plate-like metal body.

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