Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2011-07-05
2011-07-05
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Format or disposition of elements
C365S063000
Reexamination Certificate
active
07974114
ABSTRACT:
In an embodiment, a memory cell arrangement is provided. The memory cell arrangement may include a first memory cell and a second memory cell, a first source/drain line coupled to a first source/drain region of the first memory cell and a second source/drain line coupled to a second source/drain region of the first memory cell, and a third source/drain line coupled to a first source/drain region of the second memory cell and a fourth source/drain line coupled to a second source/drain region of the second memory cell, wherein the third source/drain line is disposed proximate to the second source/drain line, and wherein the third source/drain line is disposed in the same metallization level as the second source/drain line.
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Bollu Michael
Nirschl Thomas
Roehrich Mayk
Infineon - Technologies AG
Nguyen Tan T.
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