Memory cell and method of forming a magnetic tunnel junction...

Details Memory cell and method of forming a magnetic tunnel junction... Memory cell and method of forming a magnetic tunnel junction...

2011-04-05

2011-04-05

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S295000, C257SE21001, C438S003000

Reexamination Certificate

active

07919794

ABSTRACT:
A memory including a memory cell and method for producing the memory cell are disclosed. The memory includes a substrate in a first plane. A first metal connection extending in a second plane is provided. The second plane is substantially perpendicular to the first plane. A magnetic tunnel junction (MTJ) is provided having a first layer coupled to the metal connection such that the first layer of the MTJ is oriented along the second plane.

REFERENCES:
patent: 6667526 (2003-12-01), Komori
patent: 6841820 (2005-01-01), Komuro et al.
patent: 2006/0092690 (2006-05-01), Kim et al.
patent: 2007/0228501 (2007-10-01), Nakamura et al.
patent: 2007/0246787 (2007-10-01), Wang et al.
International Search Report—PCT/US09/030451, International Search Authority—European Patent Office—Jun. 5, 2009.
Written Opinion—PCT/US09/030451, International Search Authority—European Patent Office—Jun. 5, 2009.

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