Memory cell

Static information storage and retrieval – Addressing

Patent

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Details

365154, 365189, G11C 1300

Patent

active

047681721

ABSTRACT:
A memory cell comprises a memory which memorizes binary information in a static manner, a first delivery device which gives the binary information to a first bit line based on the potential of a first word line, and a second delivery device which gives the binary information memorized in the memory to a second word line different from the first word line, without forming a current path between the memory and a second bit line different from the first bit line.

REFERENCES:
patent: 4661928 (1987-04-01), Yasuoka
CICC, 1982 (pp. 311-314); Stephen Glen Bowers.
Takada et al., "RAM Buried Gate Array" (SSD84-59), published by Electron Communication Society of Japan, 1984, pp. 23-29.

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