1988-01-06
1990-03-20
Hille, Rolf
357 41, 357 71, H01L 2904, H01L 2702, H01L 2348
Patent
active
049105760
ABSTRACT:
In a semi-conductor memory cell components are formed in regions separated from each other by one or more insulation layers (40) and first and second load resistors (20,22) and gate regions (70,72) of first and second cross-coupled driver field effect transistors (16,18) are formed in a first conductive layer (64) and the word line (36) and gate regions (66,68) of first and second transfer transistors (28,30) are formed in a second conductive layer (60).
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Campbell Richard N.
Edwards Jonathan
Thompson Michael K.
Hille Rolf
Inmos Limited
Limanek Robert P.
Manzo Edward D.
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