Memory cell

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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Details

C257S040000, C257S311000

Reexamination Certificate

active

06992323

ABSTRACT:
Disclosed are memory devices with high data reading and writing speed along with capabilities for long term storage and high information density. The memory devices allow storage of several bits of data, have fast resistance switching and require low operating voltage but at the same time allow to combine its manufacturing technology with the modern semiconductor manufacturing technology. An exemplary implementation option of the memory cell contains two continuous electrodes between which there is a multilayer functional zone consisting of one active layer, one barrier layer and one passive layer.

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patent: 99101838 (2000-12-01), None
patent: WO 03/017282 (2003-02-01), None
International Search Report, PCT/RU01/00334, Feb. 21, 2002.

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