Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-01-31
2006-01-31
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S040000, C257S311000
Reexamination Certificate
active
06992323
ABSTRACT:
Disclosed are memory devices with high data reading and writing speed along with capabilities for long term storage and high information density. The memory devices allow storage of several bits of data, have fast resistance switching and require low operating voltage but at the same time allow to combine its manufacturing technology with the modern semiconductor manufacturing technology. An exemplary implementation option of the memory cell contains two continuous electrodes between which there is a multilayer functional zone consisting of one active layer, one barrier layer and one passive layer.
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International Search Report, PCT/RU01/00334, Feb. 21, 2002.
Krieger Juri Heinrich
Yudanov Nikolay Fedorovich
Advanced Micro Devices , Inc.
Amin & Turocy LLP
Nelms David
Nguyen Thinh T
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