Memory card with two SRAM arrays with different data holding vol

Details Memory card with two SRAM arrays with different data holding vol Memory card with two SRAM arrays with different data holding vol

1993-10-04

1995-01-24

Clawson, Jr., Joseph E.

Static information storage and retrieval

Powering

Data preservation

365154, 365156, 365228, 36523003, G11C 11412, G11C 11417

Patent

active

053847482

ABSTRACT:
In a memory card according to the present invention, a full CMOS type volatile memory element is employed as a memory for storing attribute data. The full CMOS type volatile memory element has a low data holding voltage, consumes less power, has a short data writing time, and is less expensive than a programmable non-volatile memory element. Further, an internal power source line is provided for the volatile memory element separately from an internal power source line for a volatile memory element for storing data, and a capacitor having a large capacity or a secondary cell is connected to the internal power source line to further increase the data holding time. The volatile memory element for storing attribute data may be combined with a control circuit. Consequently, the production cost of the memory card for storing attribute data and the attribute data writing time can be reduced. Further, since the memory element is combined with the control circuit, the space of the memory card can be effectively utilized.

REFERENCES:
patent: 4763333 (1988-08-01), Byrd
patent: 4800533 (1989-01-01), Arakawa
patent: 5047979 (1991-09-01), Leung
patent: 5243577 (1993-09-01), Ueda et al.
patent: 5274827 (1993-12-01), Haggerty et al.

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