Electricity: electrical systems and devices – Housing or mounting assemblies with diverse electrical... – For electronic systems and devices
Reexamination Certificate
2002-02-13
2003-06-17
Martin, David (Department: 2841)
Electricity: electrical systems and devices
Housing or mounting assemblies with diverse electrical...
For electronic systems and devices
C361S736000, C361S748000, C361S728000, C361S760000, C361S761000, C361S764000, C361S803000, C361S740000, C361S825000
Reexamination Certificate
active
06580615
ABSTRACT:
TECHNICAL FIELD
The present invention relates to a memory card incorporating a write
onwrite setting means for preventing erroneous erasure or erroneous rewriting of a stored content.
BACKGROUND ART
Conventionally, in some memory cards, a reflective sheet, a switch, or a setting element which is largely exposed from a main body have been used as a write
onwrite setting means.
FIG. 12
is a perspective view showing a conventional memory card
1100
incorporating a write
onwrite setting means which is realized by a reflective sheet
33
. In
FIG. 12
, reference numeral
31
denotes a main body of the memory card, reference numeral
32
denotes a terminal which is integrally formed with the main body
31
of the memory card, and reference numeral
33
denotes a reflective sheet.
Inside the main body
31
of the memory card, a semiconductor memory (not shown) in which a content is rewritable is provided. A device (not shown) which is electrically connected to the semiconductor memory through the terminal
32
reads or rewrites data stored in the semiconductor memory. In this example, the reflective sheet
33
is used as the write
onwrite setting means. The write
onwrite state of the memory card is set by applying the reflective sheet
33
onto a predetermined position on the main body
31
of the memory card or peeling the reflective sheet
33
off from the predetermined position. The device detects the write
onwrite state by detecting the reflective state at the predetermined position on the main body
31
of the memory card by using a photocoupler or the like.
FIG. 13
is a perspective view showing a conventional memory card
1200
incorporating a write
onwrite setting means which is realized by a switch
43
. In
FIG. 13
, reference numeral
41
denotes a main body of the memory card, reference numeral
42
denotes a terminal which is integrally formed with the main body
41
of the memory card, and reference numeral
43
denotes a switch.
Inside the main body
41
of the memory card, a semiconductor memory (not shown) in which a content is rewritable is provided. A device (not shown) which is electrically connected to the semiconductor memory through the terminal
42
reads or rewrites data stored in the semiconductor memory. In this example, the switch
43
is used as the write
onwrite setting means. The write
onwrite state of the memory card is set by the switching of the switch
43
. The device electrically detects the setting of the switch
43
.
In such memory cards, a more compact and thinner main body of the memory card, and more simple manipulation of a write
onwrite setting means are concurrently required.
The conventional memory card
1100
, which incorporates a write
onwrite setting means realized by the reflective sheet
33
, does not have a mechanical structure for the write
onwrite setting means. Thus, the reflective sheet
33
is effective in achieving a more compact and thinner main body
31
of the memory card. However, manipulation of the write
onwrite setting means is inconvenient because the write
onwrite state of the memory card is set by the application and the peeling off of the reflective sheet
33
.
In the conventional memory card
1200
which incorporates a write
onwrite setting means realized by the switch
43
, the write
onwrite state of the memory card is set by the switching of the switch
43
. Thus, manipulation for setting the write
onwrite state of the memory card is simple. However, there is a limit to a decrease in the size and thickness of the main body
41
of the memory card because the main body
41
of the memory card incorporates a switch.
The present invention was conceived for the purpose of providing a memory card including a write
onwrite setting means in which setting manipulation is simple, and with which the size and thickness of the main body of the memory card can be decreased.
DISCLOSURE OF THE INVENTION
A memory card according to the present invention includes: a main body of the memory card in which a notched section is formed; a semiconductor memory in which data can be at least written; a terminal provided in the main body of the memory card for electrically connecting the semiconductor memory to an external device; and a write
onwrite setting element for setting the write
onwrite state of the data in the semiconductor memory, the write
onwrite setting element being slidably fitted in the notched section, wherein the main body of the memory card includes an upper main body and a lower main body; at least one of the upper main body and the lower main body has an elastic guide formed within the notched section; the write
onwrite setting element is slidably fitted in the elastic guide and is sandwiched between the upper main body and the lower main body; the write
onwrite setting element is positioned such that a portion of the write
onwrite setting element covers a portion of the notched section; the write
onwrite setting element slides along the elastic guide so as to set the write
onwrite state of the data in the semiconductor memory; and the elastic guide has an engagement portion for engagedly stopping the write
onwrite setting element so as to select the position of the write
onwrite setting element with respect to the elastic guide, whereby the above objective is achieved.
The engagement portion may include a protrusion which is formed so as to engagedly stop the write
onwrite setting element; and the write
onwrite setting element may ride over the protrusion so as to be engagedly stopped at one of the opposite ends of the elastic guide, thereby selecting a position of the notched section which is covered with the write
onwrite setting element.
The engagement portion may include a first engagement portion which is formed by a protrusion or a cavity; the write
onwrite setting element may include a second engagement portion which is formed by a cavity or a protrusion; and the second engagement portion may be engagedly stopped by the first engagement portion, whereby the write
onwrite setting element may select a position of the notched section which is covered with the write
onwrite setting element.
One of the upper main body and the lower main body may have a slit which is formed in the elastic guide; and the write
onwrite setting element may fit in the slit.
The write
onwrite setting element may include: a manipulation portion which covers the notched section so as to achieve setting of the write
onwrite state and which is used as a manually-operated shift knob; an anti-disengagement portion which is fitted in the slit; and a slide contact portion which connects the manipulation portion with the anti-disengagement portion and which slidably contacts the elastic guide.
The other of the upper main body and the lower main body may have a reentrant groove at a position such as to face the slit; and the write
onwrite setting element may fit in the slit and the reentrant groove.
One of the upper main body and the lower main body may have a labeling region on which a label is attached so as to cover the slit.
At least one of the upper main body and the lower main body may have a reentrant groove which is formed so as to fit with the write
onwrite setting element.
Each of the upper main body and the lower main body may have a reentrant groove which is formed so as to fit with the write
onwrite setting element.
The memory card may further include a switch for electrically switching the write
onwrite state of the data, the switch being provided inside the main body of the memory card, wherein: the switch may have an activation portion which is provided so as to extend from the switch toward the write
onwrite setting element; and the activation portion may electrically switch the write
onwrite state of the data in response to a sliding movement of the write
onwrite setting element.
The memory card may further include a contact point for electrically switching the write
onwrite state of the data, the contact point being provided inside the main body of the memory card, wherein the write
Furuta Noriaki
Nakanishi Seiji
Sakamoto Takahiro
Torii Takashi
Yano Masayoshi
Martin David
Matsushita Electric - Industrial Co., Ltd.
RatnerPrestia
Tran Thanh Yen
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