Memory block erasing in a flash memory device

Details Memory block erasing in a flash memory device Memory block erasing in a flash memory device

2005-12-13

2005-12-13

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185300, C365S185220

Reexamination Certificate

active

06975538

ABSTRACT:
An erase pulse is applied to the memory block to be erased. An erase verification operation is performed to verify that each memory cell of the memory block is erased. If a memory cell has a current less than a first sense amplifier current reference level, additional erase pulses are applied to that cell until either the erase current is in the range of 30–40 μA or a maximum quantity of erase pulses have been applied. A leakage check is performed to determine if any cells have been overerased. If a cell has an erase current greater than or equal to a second sense amplifier current reference level, soft programming pulses are applied to the cell until either its erase current is less than the second reference level or a maximum quantity of soft program pulses have been applied.

REFERENCES:
patent: 5636162 (1997-06-01), Coffman
patent: 6314027 (2001-11-01), Choi
patent: 6504765 (2003-01-01), Joo
patent: 6545911 (2003-04-01), Chou
patent: 6563741 (2003-05-01), Mihnea
patent: 6654292 (2003-11-01), Keays
patent: 6714459 (2004-03-01), Hirano
patent: 6903974 (2005-06-01), Wooldridge
patent: 2003/0053348 (2003-03-01), Marotta
patent: 2003/0072181 (2003-04-01), Keays
patent: 2003/0214852 (2003-11-01), Chang
patent: 2004/0013002 (2004-01-01), Mun Jung
patent: 2004/0017722 (2004-01-01), Cavaleri
patent: 2004/0027886 (2004-02-01), Tomita

Affiliated with

Also associated with

Rating

Memory block erasing in a flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory block erasing in a flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory block erasing in a flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3491075