Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate
2007-02-27
2007-02-27
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Addressing
Plural blocks or banks
C365S203000
Reexamination Certificate
active
11023980
ABSTRACT:
The present invention relates to a memory bank structure. The memory bank structure includes: a plurality of sub-banks identified by a predetermined additional address; a plurality of local input/output line precharge units for precharging local input/output lines included in each of the sub-banks; and a plurality of local input/output line precharge control units for controlling a precharge operation of the plurality of local input/output line precharge units. Under this specific memory bank structure, the precharge operation is performed selectively at predetermined regions of the memory bank structure and as a result, unnecessary power dissipation is reduced.
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Hynix / Semiconductor Inc.
Le Thong Q.
McDermott Will & Emery LLP
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