Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-02-08
2009-11-10
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S185010, C365S063000
Reexamination Certificate
active
07616489
ABSTRACT:
The invention provides methods and apparatus. A memory array has a first well region having a first conductivity type. A plurality of second well regions of a second conductivity type is formed in the first well region. The second well regions are electrically isolated from each other. A plurality of memory cells, arranged in row and column fashion, is formed on each second well region. Corresponding rows of memory cells of the respective second well regions are commonly coupled to a word line.
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Lam David
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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