Memory array having memory cells formed from metallic material

Details Memory array having memory cells formed from metallic material Memory array having memory cells formed from metallic material

2006-04-27

2009-11-10

Rose, Kiesha L (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S004000, C257S285000, C257S295000, C257S467000, C257S529000, C257S530000, C257SE27008, C257SE27104

Reexamination Certificate

active

07615771

ABSTRACT:
Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.

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