Memory array having Frohmann-Bentchkowsky EPROM cells with a red

Static information storage and retrieval – Floating gate – Particular biasing

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36518505, 36518528, G11C 1604

Patent

active

061377228

ABSTRACT:
A plurality of Frohmann-Bentchkowsky p-channel memory transistors which are arranged in rows and columns is disclosed. Each column of memory transistors has an associated output line. A row of n-channel MOS access transistors are connected to the output columns to select individual memory transistors in a row of memory transistors.

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