Static information storage and retrieval – Floating gate – Particular biasing
Patent
1991-02-19
1993-02-09
Fears, Terrell W.
Static information storage and retrieval
Floating gate
Particular biasing
36518901, 365218, 36523001, G11C 1300
Patent
active
051857189
ABSTRACT:
Disclosed is a EEPROM flash memory array utilizing single transistor cells to provide read/write nonvolatile storage. The array includes a plurality of sectors, each oriented along the word line direction, and the sectors may include one or more word lines. An erase select transistor is provided for each sector and each word line includes a pass gate transistor which assists in both the programming and the erase operations.
REFERENCES:
patent: 5101379 (1992-03-01), Lin et al.
Chevallier Christophe J.
Hsia Steve K.
Pang Chan-Sui
Rinerson Darrell D.
Catalyst Semiconductor Corporation
Fears Terrell W.
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