Memory apparatus and method thereof for operating memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S072000, C365S185050, C365S185180

Reexamination Certificate

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07864594

ABSTRACT:
A memory apparatus, a controller, and a method thereof for programming non-volatile memory cells are provided. The memory apparatus includes a plurality of memory cells, wherein each memory cell shares a source/drain region with a neighboring memory cell. The method utilizes a compensation electron flow applied into a source/drain region between two memory cells to provide enough electron flow to program one of the two memory cells, even under the circumstances that the other memory cell has a greater threshold voltage, such that the dispersion of the programming speed of the memory cells is reduced.

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