Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-01-04
2011-01-04
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S072000, C365S185050, C365S185180
Reexamination Certificate
active
07864594
ABSTRACT:
A memory apparatus, a controller, and a method thereof for programming non-volatile memory cells are provided. The memory apparatus includes a plurality of memory cells, wherein each memory cell shares a source/drain region with a neighboring memory cell. The method utilizes a compensation electron flow applied into a source/drain region between two memory cells to provide enough electron flow to program one of the two memory cells, even under the circumstances that the other memory cell has a greater threshold voltage, such that the dispersion of the programming speed of the memory cells is reduced.
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Huang Jyun-Siang
Ou Tien-Fan
Tsai Wen-Jer
J.C. Patents
Macronix International Co. Ltd.
Pham Ly D
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