Memory and storage device utilizing the same

Details Memory and storage device utilizing the same Memory and storage device utilizing the same

2011-04-19

2011-04-19

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Format or disposition of elements

C365S063000, C365S072000

Reexamination Certificate

active

07929328

ABSTRACT:
A storage device including a memory and a reading circuit is disclosed. The memory includes a plurality of word lines, a first bit line, a second bit line, a third bit line, and a plurality of cells. The word lines are sequentially disposed in parallel. The first, the second, and the third bit lines are sequentially disposed in parallel and vertical with the word lines. Each cell corresponds to one word line and one bit line. The word line, which corresponds to the cell corresponding to the first bit line, differs from the word line, which corresponds to the cell corresponding to the second bit line. The read circuit is coupled to the memory for reading the data stored in the memory.

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