Memory and reading method thereof

Details Memory and reading method thereof Memory and reading method thereof

2008-07-31

2011-10-04

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185200, C365S185010

Reexamination Certificate

active

08031523

ABSTRACT:
A method for reading a memory, which includes a memory cell having a first half cell and a second half cell, includes the following steps. A first voltage is applied to the memory cell to determine whether a threshold voltage of the first half cell is higher than a predetermined value or not. If the threshold voltage of the first half cell is higher than the predetermined value, a second voltage higher than the first voltage is applied to the memory cell to read data stored in the second half cell, otherwise a third voltage lower than the first voltage is applied to the memory cell to read the data stored in the second half cell.

REFERENCES:
patent: 7103706 (2006-09-01), Van Buskirk et al.
patent: 2006/0062054 (2006-03-01), Hamilton et al.
patent: 2007/0268753 (2007-11-01), Lue et al.
patent: 2009/0231915 (2009-09-01), Lusky et al.
patent: 2010/0002505 (2010-01-01), Ho et al.

Affiliated with

Also associated with

Rating

Memory and reading method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory and reading method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory and reading method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4258852