Memory and reading method thereof

Details Memory and reading method thereof Memory and reading method thereof

2008-09-29

2010-11-09

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240

Reexamination Certificate

active

07830721

ABSTRACT:
A reading method applied for a memory, which includes a cell row including a first memory cell coupled to a first bit line and a second memory cell coupled to a second bit line is provided. The reading method comprises the following steps. Firstly, the first bit line coupled to a first terminal of the first memory cell is selected for reading the first memory cell in a time period. Next, the second terminal of the first memory cell is discharged via the second bit line coupled to the second memory cell in the time period.

REFERENCES:
patent: 7009880 (2006-03-01), Liu
patent: 2005/0281108 (2005-12-01), Terzioglu et al.

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