Memory and method for dissipation caused by current leakage

Details Memory and method for dissipation caused by current leakage Memory and method for dissipation caused by current leakage

2011-02-08

2011-02-08

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185150

Reexamination Certificate

active

07885109

ABSTRACT:
Memories with low power consumption and methods for suppressing current leakage of a memory. The memory cell of the memory has a storage element and a transistor coupled in series. The invention sets a voltage across the transistor approaching to zero when the memory is not been accessed.

REFERENCES:
patent: 6992365 (2006-01-01), Xu et al.
patent: 2003/0203558 (2003-10-01), Lowrey
patent: 2005/0169095 (2005-08-01), Bedeschi et al.
patent: 2008/0285326 (2008-11-01), Alami et al.
patent: 1414563 (2003-04-01), None
Y.H Ha et al., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption”, pp. 175-176, 2003 Symposium on VLSI Technology Digest of Technical Papers, US.

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