Memory and access device and method therefor

Details Memory and access device and method therefor Memory and access device and method therefor

2011-03-15

2011-03-15

Dickey, Thomas L (Department: 2826)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C257SE21068, C365S163000

Reexamination Certificate

active

07906369

ABSTRACT:
Briefly, in accordance with an embodiment of the invention, a memory and a method to manufacture the memory is provided. The memory may include a phase change material over a substrate. The memory may further include a switching material coupled to the phase change material, wherein the switching material comprises a chalcogen other than oxygen and wherein the switching material and the phase change material form portions of a vertical structure over the substrate.

REFERENCES:
patent: 2004/0026730 (2004-02-01), Kostylev et al.

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