Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-09-10
1998-06-30
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
336 65, 336223, 336232, H01L 2900
Patent
active
057738700
ABSTRACT:
A membrane type integrated inductor includes an integrated inductor laid out on the upper plane of a membrane. The process to manufacture a membrane type integrated inductor includes the following steps: forming a thin dielectric layer at the outer portion of a substrate; forming a wire-wound integrated inductor thin dielectric layer with the known technique; defining an open window on the back of the substrate below the inductor through the backside etch; and forming a membrane type integrated inductor by using the thin dielectric layer on the silicon substrate as the etching stop. One embodiment uses silicon dioxide as the membrane layer. The low dielectric constant of SiO.sub.2 may be used to lower the power loss during the lay out of the circuit parts, to effectively raise the induction value, to lower the parasitic capacitance, to increase the resonance frequency, to decrease the volume of the chip which the inductor utilized, and to raise the quality factor.
REFERENCES:
patent: 5539241 (1996-07-01), Abidi et al.
Chuang Kuen Joung
Sheu Jeng Tzong
Su Shyang
National Science Council
Ngo Ngan V.
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