Semiconductor device manufacturing: process – Voltage variable capacitance device manufacture
Reexamination Certificate
2008-03-27
2010-11-02
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Voltage variable capacitance device manufacture
C438S048000, C438S053000, C438S057000, C438S763000, C257S414000, C257S595000, C257SE21350
Reexamination Certificate
active
07824997
ABSTRACT:
A method for micro-machining a varactor that is part of a membrane suspended MEMS tunable filter. In one non-limiting embodiment, the method includes providing a main substrate; depositing a membrane on the main substrate; depositing and patterning a plurality of sacrificial photoresist layers at predetermined times during the fabrication of the varactor; depositing metal layers that define a fabricated varactor structure enclosed within photoresist; coupling a carrier substrate to the fabricated structure opposite to the main substrate using a release layer; etching a central portion of the main substrate to expose the membrane; removing the carrier substrate by dissolving the release layer in a material that attacks the release layer but does not dissolve the photoresist; and removing the photoresist layers to provide a released varactor.
REFERENCES:
patent: 6857501 (2005-02-01), Han et al.
patent: 2005/0226281 (2005-10-01), Faraone et al.
patent: 2006/0065916 (2006-03-01), Zhang et al.
patent: 1020050029884 (2005-03-01), None
Peroulis et al, Electrostatically-Tunable Analog RF MEMS Varactors with Measured Capacitance Range of 300%, pp. 1793-1796, Microwave Symposium Digest, 2003 IEEE MTT-S International, Publication Date: Jun. 8-13, 2003.
Katehi Linda P. B.
Margomenos Alexandros
Tang Yuxing
EMAG Technologies, Inc.
Miller John A.
Miller IP Group, PLC
Munoz Andres
Pham Thanh V
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