Membrane protected pressure sensor

Details Membrane protected pressure sensor Membrane protected pressure sensor

1986-04-22

1987-08-18

Woodiel, Donald O.

Metal working

Method of mechanical manufacture

Electrical device making

73706, 73723, 73754, 1563031, 26427217, G01L 708, G01L 900

Patent

active

046867643

ABSTRACT:
A solid state semiconductor pressure sensor is described in which the pressure sensor element is protected from the ambient whose pressure is being measured by a combination of a pressure transfer medium and a thin covering membrane. A method is described for applying the thin covering membrane so as to substantially avoid entrapment of air or formation of voids in the pressure transfer medium which would degrade the performance of the sensor. The pressure transfer medium is a gel-like material such as a silastic. The membrane is chosen to be substantially impermeable to the ambients being measured and sufficiently flexible to be rolled across the surface of the assembly during fabrication and to avoid attenuation of the input pressure signal. Fluorosilicone is an example of a suitable membrane material.

REFERENCES:
patent: 2569987 (1951-10-01), Frondel
patent: 4274423 (1981-06-01), Mizuno et al.

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