Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/sur

Details Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/sur Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/sur

1985-10-11

1987-07-07

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 66, 430 84, G03G 5082

Patent

active

046787330

ABSTRACT:
A light receiving member comprises a light receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity and a surface layer having reflection preventive function provided on a substrate successively from the substrate side, said light receiving layer containing at least one selected from oxygen atoms, carbon atoms and nitrogen atoms and having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.

REFERENCES:
patent: 4359514 (1982-11-01), Shimizu et al.
patent: 4492745 (1985-01-01), Mimura et al.
patent: 4514483 (1985-04-01), Matsuura et al.

Affiliated with

Also associated with

Rating

Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/sur does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/sur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/sur will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1662699