Member for use in production device for semiconductors

Details Member for use in production device for semiconductors Member for use in production device for semiconductors

1998-12-23

1999-11-09

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 94, 117 95, 117106, 117952, 117953, C30B 2518

Patent

active

059806320

ABSTRACT:
A process for producing a Group III--V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) employs a support member for forming the semiconductor, wherein the member constitutes SiC which is obtained by converting a graphite base material into SiC. In another embodiment, the member comprises a graphite-SiC composite wherein at least a surface layer part of a graphite substrate is converted into SiC. The member of the invention has superior chemical and mechanical stability, thereby making it useful in high-productivity production devices for making compound semiconductors.

REFERENCES:
patent: 3816166 (1974-06-01), Eversteijn et al.
patent: 4986215 (1991-01-01), Yamada et al.
patent: 5121531 (1992-06-01), Severns et al.
patent: 5406575 (1995-04-01), Chelny et al.

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