Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-04-19
2011-04-19
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C428S029000
Reexamination Certificate
active
07928457
ABSTRACT:
To provide novel semiconductor light-emitting device member superior in transparency, light resistance, and heat resistance and capable of sealing semiconductor light-emitting device and holding phosphor without generating cracks or peelings even after use for a long time, the member meets the following requirements: (1) comprising functional group forming hydrogen bond with hydroxyl group or oxygen in a metalloxane bond, on the surface of ceramic or metal, (2) maintenance rate of transmittance at 400 nm wavelength before and after left at 200° C. for 500 hours is between 80% to 110%, (3) no change is observed by visual inspection after irradiated with light having 380 nm to 500 nm wavelength, whose center wavelength is between 400 nm and 450 nm both inclusive, for 24 hours with 4500 W/m2illumination intensity at 436 nm wavelength, and (4) refractive index at 550 nm wavelength is 1.45 or larger.
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U.S. Appl. No. 11/816,640, filed Aug. 20, 2007, Kato, et al.
Abe Mari
Kato Hanako
Kobayashi Hiroshi
Mori Yutaka
Tomura Tsubasa
Mitsubishi Chemical Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Rao Steven H
Weiss Howard
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