Member for semiconductor device using an aluminum nitride substr

Details Member for semiconductor device using an aluminum nitride substr Member for semiconductor device using an aluminum nitride substr

1997-01-31

1999-12-07

Zimmerman, John J.

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

257703, 257705, H01L 2314, H01L 2350, H01L 23373

Patent

active

059980435

ABSTRACT:
A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000.degree. C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire matallization.

REFERENCES:
patent: 4840853 (1989-06-01), Ito et al.
patent: 4886709 (1989-12-01), Sasame et al.
patent: 4963701 (1990-10-01), Yasumoto et al.
patent: 5010388 (1991-04-01), Sasame et al.
patent: 5034357 (1991-07-01), Yamakawa et al.
patent: 5045400 (1991-09-01), Esashi
patent: 5096749 (1992-03-01), Harada et al.
patent: 5217589 (1993-06-01), Arledge et al.
patent: 5221639 (1993-06-01), White
patent: 5312698 (1994-05-01), Sato et al.
patent: 5326623 (1994-07-01), Yamakawa et al.
patent: 5354415 (1994-10-01), Fushii et al.
patent: 5370907 (1994-12-01), Yamakawa et al.
patent: 5464950 (1995-11-01), Horiuchi et al.
patent: 5561321 (1996-10-01), Hirano et al.
patent: 5679469 (1997-10-01), Shimoda et al.
patent: 5760466 (1998-06-01), Masuri et al.

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