Member for carrying a semiconductor device

Details Member for carrying a semiconductor device Member for carrying a semiconductor device

1991-03-06

1992-07-21

Wojciechowicz, Edward J.

Alloys or metallic compositions

Aluminum base

Copper containing

357 67, 420528, 420548, H01L 3902, C22C 2100

Patent

active

051327767

ABSTRACT:
A radiation member (10) for a semiconductor device is formed by an aluminum alloy member having a low thermal expansion aluminum alloy section (11) and a high radiation aluminum alloy section (12) which are joined and integrally formed with each other. A semiconductor device (13) is carried on the major surface of the low thermal expansion aluminum alloy section (11). The low thermal expansion coefficient aluminum alloy has an average thermal expansion coefficient of not more than 17.times.10.sup.-6 /.degree.C. The high radiation aluminum alloy is larger in thermal conductivity than the low thermal expansion aluminum alloy.

REFERENCES:
patent: 4069497 (1978-01-01), Steidlitz
patent: 4172261 (1979-10-01), Tsuzuki et al.
patent: 4352120 (1982-09-01), Kurihara et al.
patent: 4686083 (1987-08-01), Takizawa et al.
patent: 4760240 (1988-07-01), Iikawa et al.
patent: 4830820 (1989-05-01), Itoh et al.
patent: 4914551 (1990-04-01), Anschel et al.
patent: 4926242 (1990-05-01), Itoh et al.
Nutt, Metallurgy & Plastics for Engineers, 1977, pp. 200-210.
Hatch, Aluminum: Properties and Physical Metallurgy, 1984, pp. 413-424.

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