Member for a semiconductor structure

Details Member for a semiconductor structure Member for a semiconductor structure

1988-06-28

1990-10-23

James, Andrew J.

357 71, 357 74, H01L 2302

Patent

active

049656597

ABSTRACT:
A member for a semiconductor structure is constructed, for example, as a mounting, or as a cover, or as a heat sink. Such a component is obtained by joining an aluminum nitride insulating substrate and a radiating element. The metal material for forming the radiating member has a thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0.times.10.sup.-6 /K.sup.-1. Preferably the material forming the radiating element is made of a tungsten alloy containing copper by not more than 5 percent by weight.

REFERENCES:
patent: 4321617 (1982-03-01), Duda et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 4, Sep. 1977, "Air-Cooled Module Heat Dissipation", by G. Dumaine et al.

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