Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-08-28
2007-08-28
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S032000, C117S044000
Reexamination Certificate
active
10927414
ABSTRACT:
The invention relates to producing a melt that is as homogeneous as possible, to which fresh material in the form of granulate is continuously supplied. Since the granulate is cooler than the melt, heat sinks form that are especially pronounced when the granulate forms clumps in the melt. Therefore, the invention relates to a means for distributing the granulate. In one aspect, the means are inductors arranged outside the melting crucible that generate an alternating magnetic field in the melt. In this way, electrical currents are induced there that, in turn, cause the material flows. In one aspect, the inductors are arranged and controlled in such a way that a rapid distribution of the granulate is effected and thus its rapid melting. In this way, good homogeneity is achieved, especially in the center of the melt where the removal of the melted material also occurs.
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Altekrüger Burkhard
Mühe Andreas
Vonhoff Axel
Crystal Growing Systems GmbH
Hiteshew Felisa
Needle & Rosenberg P.C.
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