Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-06-17
2008-12-16
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S034000, C117S214000
Reexamination Certificate
active
07465351
ABSTRACT:
A method of servicing multiple crystal forming apparatus with a single melter assembly is provided. The method includes the steps of positioning the melter assembly relative to a first crystal forming apparatus for delivering molten silicon to a crucible of the first apparatus. A heater in the melter assembly is operated to melt source material in a melting crucible. A stream of molten source material is delivered from the melter assembly to the first crystal forming apparatus. The melter assembly is positioned relative to a second crystal forming apparatus for delivering molten silicon to a crucible of the second apparatus. A stream of molten source material is transferred from the melter assembly to the second crystal forming apparatus.
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Armstrong Teasdale LLP
Kunemund Robert M
MEMC Electronic Materials , Inc.
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