Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2008-03-18
2008-03-18
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S013000, C117S023000, C117S026000, C117S084000
Reexamination Certificate
active
11155105
ABSTRACT:
A method of charging a crystal forming apparatus with molten source material is provided. The method includes the steps of positioning a melter assembly relative to the crystal forming apparatus for delivering molten silicon to a crucible of the apparatus. An upper heating coil in the melter assembly is operated to melt source material in a melting crucible. A lower heating coil in the melter assembly is operated to allow molten source material to flow through an orifice of the melter assembly to deliver a stream of molten source material to the crucible of the crystal forming apparatus. The invention is also directed to a method of charging a crystal puller with molten silicon including the step of removing an upper housing of the crystal puller defining a pulling chamber from a lower housing of the crystal puller defining a growth chamber and attaching the lower housing in place of the upper housing.
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International Search Report, PCT/US2005/021369, dated Jun. 30, 2006.
Hiteshew Felisa
MEMC Electronic Materials , Inc.
Senniger Powers
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