Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2008-03-18
2008-03-18
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S013000, C117S023000, C117S026000, C117S084000
Reexamination Certificate
active
07344594
ABSTRACT:
A method of charging a crystal forming apparatus with molten source material is provided. The method includes the steps of positioning a melter assembly relative to the crystal forming apparatus for delivering molten silicon to a crucible of the apparatus. An upper heating coil in the melter assembly is operated to melt source material in a melting crucible. A lower heating coil in the melter assembly is operated to allow molten source material to flow through an orifice of the melter assembly to deliver a stream of molten source material to the crucible of the crystal forming apparatus. The invention is also directed to a method of charging a crystal puller with molten silicon including the step of removing an upper housing of the crystal puller defining a pulling chamber from a lower housing of the crystal puller defining a growth chamber and attaching the lower housing in place of the upper housing.
REFERENCES:
patent: 3591348 (1971-07-01), Belle, Jr.
patent: 4036595 (1977-07-01), Lorenzini et al.
patent: 4036646 (1977-07-01), Hellmig et al.
patent: 4036666 (1977-07-01), Mlavsky
patent: 4162291 (1979-07-01), Arcella et al.
patent: 4175610 (1979-11-01), Zauhar et al.
patent: 4230674 (1980-10-01), Taylor et al.
patent: 4233338 (1980-11-01), Ricard et al.
patent: 4246064 (1981-01-01), Dewees et al.
patent: 4282184 (1981-08-01), Fiegl et al.
patent: 4323419 (1982-04-01), Wakefield
patent: 4353875 (1982-10-01), Yancey
patent: 4382838 (1983-05-01), Authier
patent: 4396824 (1983-08-01), Fiegl et al.
patent: 4440728 (1984-04-01), Stormont et al.
patent: 4454096 (1984-06-01), Lorenzini et al.
patent: 4572812 (1986-02-01), Ciszek
patent: 4594229 (1986-06-01), Ciszek et al.
patent: 4627887 (1986-12-01), Sachs
patent: 4647437 (1987-03-01), Stormont et al.
patent: 4650540 (1987-03-01), Stoll
patent: 4659421 (1987-04-01), Jewett
patent: 4661200 (1987-04-01), Sachs
patent: 4664742 (1987-05-01), Tomizawa et al.
patent: 4670096 (1987-06-01), Schwirtlich et al.
patent: 4689109 (1987-08-01), Sachs
patent: 4710260 (1987-12-01), Witter et al.
patent: 4769107 (1988-09-01), Helmreich et al.
patent: 5034200 (1991-07-01), Yamashita et al.
patent: 5069741 (1991-12-01), Kida et al.
patent: 5126114 (1992-06-01), Kamio et al.
patent: 5156978 (1992-10-01), Bathey et al.
patent: 5178719 (1993-01-01), Pandelisev
patent: 5211802 (1993-05-01), Kaneko et al.
patent: 5242531 (1993-09-01), Klingshirn et al.
patent: 5290395 (1994-03-01), Matsumoto et al.
patent: 5324488 (1994-06-01), Klingshirn et al.
patent: 5360480 (1994-11-01), Altekruger
patent: 5373807 (1994-12-01), Holder
patent: 5427056 (1995-06-01), Imai et al.
patent: 5488923 (1996-02-01), Imai et al.
patent: 5492078 (1996-02-01), Alterkruger et al.
patent: 5551977 (1996-09-01), Menna
patent: 5588993 (1996-12-01), Holder
patent: 5704992 (1998-01-01), Willeke et al.
patent: 5820649 (1998-10-01), Ogure et al.
patent: 5858087 (1999-01-01), Taguchi et al.
patent: 5919303 (1999-07-01), Holder
patent: 5919503 (1999-07-01), Leusner
patent: 6071339 (2000-06-01), Pandelisev
patent: 6090199 (2000-07-01), Wallace, Jr. et al.
patent: 6093913 (2000-07-01), Schrenker et al.
patent: 6099641 (2000-08-01), Ikeda
patent: 6139811 (2000-10-01), Cao et al.
patent: 6217649 (2001-04-01), Wallace, Jr. et al.
patent: 6284040 (2001-09-01), Holder et al.
patent: 6361597 (2002-03-01), Takase et al.
patent: 6423137 (2002-07-01), Takase
patent: 6429035 (2002-08-01), Nakagawa et al.
patent: 6454851 (2002-09-01), Fuerhoff et al.
patent: 6506250 (2003-01-01), Breitenstein et al.
patent: 6562132 (2003-05-01), Mackintosh et al.
patent: 6596075 (2003-07-01), Igarashi et al.
patent: 6652132 (2003-11-01), Hsueh
patent: 6652645 (2003-11-01), Holder
patent: 6746709 (2004-06-01), Lauinger et al.
patent: 6908510 (2005-06-01), Pandelisev
patent: 2002/0124792 (2002-09-01), Sreedharamurthy et al.
patent: 2772741 (1999-06-01), None
patent: 2831881 (2003-05-01), None
patent: 05 2799166 (1993-10-01), None
patent: 11092276 (1999-04-01), None
patent: 2005105670 (2005-11-01), None
International Search Report, PCT/US2005/021369, dated Jun. 30, 2006.
Hiteshew Felisa
MEMC Electronic Materials , Inc.
Senniger Powers
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