Medium purity metallurgical silicon and method for preparing...

Details Medium purity metallurgical silicon and method for preparing... Medium purity metallurgical silicon and method for preparing...

2008-07-29

2008-07-29

Nguyen, Ngoc-Yen M (Department: 1793)

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

C423S348000, C423S350000

Reexamination Certificate

active

07404941

ABSTRACT:
The invention concerns a method for producing a medium purity silicon comprising: preparing, by carbothermic reduction of silica in a submerged arc-furnace a silicon with low boron content; refining the liquid silicon with oxygen or chlorine; treating the refined silicon under reduced pressure from 10 to 100 Pa with neutral gas injection; segregated solidification. The invention also concerns a medium purity silicon designed to serve as raw material for making silicon of electronic or voltaic quality, and having (in weight fractions): a total of impurities ranging between 100 and 400 ppm, with the content in metallic elements ranging between 30 and 300 ppm; a boron content from 1 to 10 ppm; a phosphorus/boron ratio ranging between 0.5 and 1.5.

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Database WPI, Section Ch, Week 199234, Derwent Publications Ltd., London, Great Britain, Class E36, AN 1992-281549, Article No. XP002194088.
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