Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-08-06
2010-12-14
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000, C257S005000, C257S295000, C257SE21476, C257SE27004, C257SE45002, C438S095000, C438S097000, C438S672000
Reexamination Certificate
active
07851779
ABSTRACT:
A medium for use in data storage, thermal energy storage and other applications, the medium comprising a functional layer made of different materials. One embodiment provides a data storage medium. The data storage medium comprises a substrate and a data storage layer supported by the substrate. The data storage layer comprises a plurality of regions each capable of representing a digital value. The data storage layer is at least partly made of a first material and a second material different from the first material. The data storage layer comprises a pattern of discrete portions made of the second material lying in a plane defined by the data storage layer. The pattern is configured such that each region representing a digital value contains a portion made of the first material and at least one of the discrete portions made of the second material. Other embodiments provide a thermal energy storage medium and a sensing medium.
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Chong Tow Chong
Shi Luping
Wang Zengbo
Agency for Science Technology and Research
Dinsmore & Shohl LLP
Nguyen Dao H
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