Mechanism for improving the structural integrity of low-k films

Details Mechanism for improving the structural integrity of low-k films Mechanism for improving the structural integrity of low-k films

2006-01-03

2006-01-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

C427S462000, C427S509000

Reexamination Certificate

active

06982206

ABSTRACT:
According to one embodiment, a method of forming a low-k dielectric composite film is provided. A low-k interconnect dielectric layer is strengthened by forming whiskers in the low-k film. The whiskers are formed simultaneously with the low-k layer. In one embodiment, the low-k structure is removed by heating a volatile matrix film, leaving a whisker residue.

REFERENCES:
patent: 6030904 (2000-02-01), Grill et al.
patent: 6168726 (2001-01-01), Li et al.
patent: 6420092 (2002-07-01), Yang et al.
patent: 6433301 (2002-08-01), Dunsky et al.
patent: 6531777 (2003-03-01), Woo et al.
patent: 6753483 (2004-06-01), Andoh et al.
patent: 6781090 (2004-08-01), Sun et al.
patent: 2001/0026956 (2001-10-01), Baklanov et al.
patent: 2003/0047541 (2003-03-01), Sun et al.
patent: 2004/0022012 (2004-02-01), Yamamoto et al.
patent: 2004/0051169 (2004-03-01), Chen et al.
patent: 2004/0089471 (2004-05-01), Andoh et al.

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