Mechanical sensor for high temperature environments

Details Mechanical sensor for high temperature environments Mechanical sensor for high temperature environments

1988-04-29

1990-02-27

Walberg, Teresa J.

Electrical resistors

Resistance value responsive to a condition

Force-actuated

338 4, H01C 1010, G01L 122

Patent

active

049049780

ABSTRACT:
A force or pressure sensor includes a monocrystalline silicon diaphragm coated with silicon dioxide upon which single crystalline silicon resistors are fused in a low profile pattern on the surface. The resistors are almost perfectly electrically isolated from each other and from the underlying silicon substrate. The structure is fabricated by forming resistors in a first wafer and then affixing that surface of the first wafer to the silicon dioxide layer on the second wafer. All of the first wafer except for the resistors has been removed, and metal contact capable of resisting elevated temperatures are formed to provide electrical connections to the resistors.

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Lasky, J. B. et al., "Silicon-on-Insulator (SOI) by Bonding and Etch-Back," IEDM 85 (1985), pp. 684-687.
Poff, Ronald I., "Stable Miniature Pressure Transducer Using Inorganic Bonding Construction," ISA, 1987-Paper #87-0250, pp. 373-382.

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