Mechanical field effect transistor sensor

Details Mechanical field effect transistor sensor Mechanical field effect transistor sensor

1988-06-17

1989-10-17

Myracle, Jerry W.

Measuring and testing

Specimen stress or strain, or testing by stress or strain...

Specified electrical sensor or system

357 25, G01B 716

Patent

active

048738719

ABSTRACT:
A mechanical field effect transistor sensor which has a drain and a source on a semiconductor portion, and a moveable gate which causes conduction between the drain and source when the gate is in proximity or touching the semiconductor portion. The gate in its preferred embodiment comprises a cantilever microbeam which allows movement of the gate up or down with respect to the semiconductor portion when a force is applied to the microbeam. The microbeam can be replaced with a diaphragm or a simply supported beam. The gate is coupled to an external voltage source which supplies a voltage to the gate causing the conduction between drain and source. Another embodiment uses a piezoelectric material for the gate which generates a voltage when it is compressed or expanded due to forces caused by changes in acceleration and magnetic fields.

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