Mechanical-electrical force transducer with semiconductor-insula

Details Mechanical-electrical force transducer with semiconductor-insula Mechanical-electrical force transducer with semiconductor-insula

1974-12-10

1977-03-08

James, Andrew J.

357 15, 357 67, 357 71, H01L 2984, H01L 2996, H01L 2948, H01L 2956

Patent

active

040115771

ABSTRACT:
A semiconductor mechanical-electrical transducer is obtained by providing a mechanical force applying means on a semiconductor composite comprising a semiconductor substrate, an insulating film formed on said semiconductor substrate and a film of tin oxide deposited on said insulating film and having a barrier having a rectifying characteristic. Preferably, the material of said insulating film may be selected from a group consisting of SiO.sub.2, Si.sub.3 N.sub.4 and GeO.sub.2 and the thickness of the film may be chosen to be 15 to 80A, but preferably to be 20 to 60A and more preferably to be 20 to 40A. It was discovered that such composite shows an increased reverse current response to mechanical force applied to the composite in case where the thickness of the SiO.sub.2 film has been chosen to the said particular value range. Preferably, the main surface of the substrate is made uneven. It was also discovered that in such an embodiment a shearing stress is applied to the barrier, when the mechanical force is applied to the composite, in which case the conversion efficiency of the energy is enhanced as compared with a case where the main surface has been mirror-polished.

REFERENCES:
patent: 3106489 (1963-10-01), Lepselter
patent: 3369132 (1968-02-01), Fang et al.
patent: 3398021 (1968-08-01), Lehrer et al.
patent: 3457473 (1969-07-01), Okada et al.
patent: 3611068 (1971-10-01), Fujita
patent: 3787718 (1974-01-01), Patterson
patent: 3790869 (1974-02-01), Tanimura et al.
patent: 3872490 (1975-03-01), Higashi et al.
Metal-Dependent Interface States in Thin MOS Structures by Kar et al., Applied Physics Letters, vol. 18, No. 9, May 1, 1971, pp. 401-403.
Solid State Electronics, Metal-Silicon Schottky Barrier, by M. J. Turner et al., vol. 11, pp. 291-300, Mar. 1968.

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