Measuring method of a relative positional deviation of reticle p

Details Measuring method of a relative positional deviation of reticle p Measuring method of a relative positional deviation of reticle p

1996-06-14

1998-06-30

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

356399, 382144, G03F 900, G06K 900

Patent

active

057731802

ABSTRACT:
In a projection exposure apparatus which exposes a semiconductor wafer, a reticle is set on a reticle stage, a wafer is set on a wafer stage, and a reticle pattern is projected and exposed on a wafer. In the pattern formed on the wafer, a positional deviation of the pattern is measured with reference a reticle alignment mark. With regard to a plurality of wafers, a difference between positional deviations of the projected patterns at the same coordinate position is obtained, and a relative positional deviation of the reticle patterns is determined.

REFERENCES:
patent: 4835078 (1989-05-01), Harvey et al.
patent: 5498500 (1996-03-01), Bae
patent: 5543256 (1996-08-01), Shinoda et al.
patent: 5578401 (1996-11-01), Hwang
patent: 5616438 (1997-04-01), Hwang

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