Measuring bi-directional current through a field-effect...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S765010

Reexamination Certificate

active

07154291

ABSTRACT:
A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

REFERENCES:
patent: 5229709 (1993-07-01), Pfennings
patent: 5498984 (1996-03-01), Schaffer
patent: 5576648 (1996-11-01), Rossi et al.
patent: 6642738 (2003-11-01), Elbanhawy
patent: 0274995 (1988-07-01), None
patent: 0315597 (1989-05-01), None
patent: 2004208185 (2004-07-01), None
patent: 9810301 (1998-03-01), None
“741 Op-Amp Tutorial,” University of Pennsylvania—School of Engineering & Applied Science, Mar. 20, 2002, http://www.seas.upenn.edu/courses/belab/ReferenceFiles/Electronics/LM741tutorial.pdf, pp. 1-9.

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