Measuring back-side voltage of an integrated circuit

Details Measuring back-side voltage of an integrated circuit Measuring back-side voltage of an integrated circuit

2005-03-29

2005-03-29

Niebling, John F. (Department: 2312)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Interconnecting plural devices on semiconductor substrate

Reexamination Certificate

active

06872581

ABSTRACT:
Methods for integrated circuit diagnosis, characterization or modification using a charged particle beam. In one implementation, the bulk silicon substrate of an integrated circuit is thinned to about 1 to 3 μm from the deepest well, a voltage is applied to a circuit element that is beneath the outer surface of the thinned substrate. The applied voltage induces an electrical potential on the outer surface, which is detected as a surface feature on the outer surface by its interaction with the charged particle beam.

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T.M. Eiles, et al., “Transparent Heat Spreader for Backside Optical Analysis of High Power Microprocessors,” Proceedings of the 26thInternational Symposium for Testing and Failure Analysis (2000), pp. 547-551.

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