Measuring apparatus for etching pits

Details Measuring apparatus for etching pits Measuring apparatus for etching pits

1986-06-19

1989-06-20

Rosenberger, Richard A.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356 31, 356384, G01B 1122

Patent

active

048404870

ABSTRACT:
An apparatus for measuring dry etching pits formed in a semiconductor device during the manufacture thereof by employing optical means. Wiring on semiconductor devices increasingly become fine or minute, i.e., the size of wiring of some devices is less than 1 .mu.m. A technical matter to be solved is to effect highly accurate dimensional measurement in such submicron region. The apparatus has a .theta. stage which is additionally provided on an XY stage, and a mechanism which provides excellent selectivity in detection of interference intensity of diffracted beam. In addition, a short wavelength laser, such as a He-Ne, He-Cd, N.sub.2 or Ar laser, is employed as a laser source. As a practical advantage, it is possible to monitor etching of a pit with a depth on the order of 10 .mu.m with respect to a pattern with a planar dimension of 0.3 .mu.m to 1.0 .mu.m.

REFERENCES:
patent: 2423357 (1947-07-01), Watrobski
patent: 4303341 (1981-12-01), Kleinkrecht et al.
patent: 4412345 (1983-10-01), Workman et al.
patent: 4454001 (1984-06-01), Sternheim et al.
patent: 4615620 (1986-10-01), Noguchi et al.
patent: 4618262 (1986-10-01), Maydan et al.

Affiliated with

Also associated with

Rating

Measuring apparatus for etching pits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Measuring apparatus for etching pits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Measuring apparatus for etching pits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-522650