Measuring and trimming circuit components embedded in...

Thermal measuring and testing – Determination of inherent thermal property

Reexamination Certificate

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C374S141000

Reexamination Certificate

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11232909

ABSTRACT:
There is described a method and sub-circuit to measure temperature coefficients (coefficient of variation of a measurable parameter of the component), by using a thermally-isolated silicon micro-platform with a mass of mono-crystalline silicon suspended from it. The particular effectiveness of the measurement of temperature coefficient(s) stems from the influence of the mono-crystalline silicon mass in maintaining a substantially uniform temperature throughout the micro-platform. The measurement of temperature coefficient can be an absolute temperature coefficient of one or more components, or can be a relative temperature coefficient of two components, or can be relative temperature coefficients between more than two components.

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Erno H. Klaassen, et al.: Diode-based thermal r.m.s. converter with on-chip circuitry fabricated using CMOS technology: Sensors and Actuators A 52 (1996) pp. 33-40.
Erno H. Klaassen, et al.: Micromachined thermally isolated circuits Sensors and Actuators A 58 (1997) pp. 43-50.
Richard J. Reay, et al.: Thermally and Electrically Isolated Single Crystal Silicon Structures in CMOS Technology IEEE Electron Device Letters vol. 15 No. 10 Oct. 1994 (399-401).

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