Measuring a damaged structure formed on a wafer using...

Details Measuring a damaged structure formed on a wafer using... Measuring a damaged structure formed on a wafer using...

2006-03-30

2009-11-17

Pham, Hoa Q (Department: 2886)

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

C702S076000

Reexamination Certificate

active

07619731

ABSTRACT:
A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.

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