Optics: measuring and testing – Inspection of flaws or impurities – Surface condition
Reexamination Certificate
2008-01-29
2008-01-29
Toatley, Jr., Gregory J. (Department: 2877)
Optics: measuring and testing
Inspection of flaws or impurities
Surface condition
C356S237300, C356S237400, C356S237500, C356S445000, C700S110000, C700S109000, C700S121000
Reexamination Certificate
active
07324193
ABSTRACT:
A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.
REFERENCES:
patent: 6591405 (2003-07-01), Doddi
patent: 6608690 (2003-08-01), Niu et al.
patent: 6694275 (2004-02-01), Jakadar et al.
patent: 6743646 (2004-06-01), Jakatdar et al.
patent: 6768983 (2004-07-01), Jakatdar et al.
patent: 6785638 (2004-08-01), Niu et al.
patent: 6839145 (2005-01-01), Niu et al.
patent: 6891626 (2005-05-01), Niu et al.
patent: 6928395 (2005-08-01), Niu et al.
patent: 6943900 (2005-09-01), Niu et al.
patent: 6947141 (2005-09-01), Bischoff et al.
patent: 7046375 (2006-05-01), Bischoff et al.
patent: 7072049 (2006-07-01), Niu et al.
patent: 2003/0198895 (2003-10-01), Toma et al.
patent: 2004/0017574 (2004-01-01), Vuong et al.
patent: 2004/0267397 (2004-12-01), Doddi et al.
patent: 2005/0077597 (2005-04-01), Toma et al.
patent: 2005/0215072 (2005-09-01), Kevwitch et al.
patent: 2007/0077782 (2007-04-01), Lee et al.
Machavariani, Vladimir, Sharar Gov, and Yoel Cohen, “Scatterometry- Interpretation by Different Methods of Electromagnetic Simulation,” Proceedings of SPIE, vol. 4689 (2002), pp. 177-183.
Stover, J. C. (1995). Optical Scattering-Measurement and Analysis, Second Edition, SPIE-The International Society for Optical Engineering: Bellingham, Washington, 5 pages (Table of Contents).
Moharam, M. G. et al. (May 1995). “Stable Implementation of the Rigorous Coupled-Wave Analysis for Surface-Relief Dielectric Gratings: Enhanced Transmittance Matrix Approach,” Journal of the Optical Society of America A 12(5):1077-1086.
U.S. Appl. No. 11/394,592, filed Mar. 30, 2006 for Lally et al.
U.S. Appl. No. 11/395,636, filed Mar. 30, 2006 for Lally et al.
U.S. Appl. No. 11/396,210, filed Mar. 30, 2006 for Lally et al.
Funk Merritt
Lally Kevin
Sundararajan Radha
Morrison & Foerster / LLP
Slomski Rebecca C.
Toatley , Jr. Gregory J.
Tokyo Electron Limited
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