Measurement of semiconductor parameters at cryogenic temperature

Details Measurement of semiconductor parameters at cryogenic temperature Measurement of semiconductor parameters at cryogenic temperature

1990-08-10

1994-05-03

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158F, 324158P, G01R 3126, G01R 3128

Patent

active

053090888

ABSTRACT:
A system and method for testing the properties of semiconductor material including an enclosed chamber, a sample of semiconductor material under test having a polished surface portion and insulator layer over the polished surface portion supported in the chamber, a spring probe disposed within the chamber impinging against the insulator layer, a contact disposed on a surface portion of the semiconductor material under test, a pair of contacts disposed external to the chamber, each of the pair of contacts coupled to a different one of the contact and the spring probe and a container supporting the chamber and containing a cryogenic material therein surrounding the chamber. The semiconductor material is preferably a group II-VI composition, preferably HgCdTe. The contact disposed on the surface portion of the semiconductor material is preferably indium. A support, preferably sapphire, is provided for the sample. In a second embodiment, the support for the material under test is controllable for movement in a plane normal to the probe.

REFERENCES:
patent: 3710251 (1973-01-01), Hagge et al.
patent: 4167791 (1979-09-01), Banavar et al.
patent: 4177093 (1979-12-01), Feng et al.

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