Measurement of proximity effects in electron beam lithography

Details Measurement of proximity effects in electron beam lithography Measurement of proximity effects in electron beam lithography

1984-01-25

1988-08-02

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504911, H01J 326

Patent

active

047615605

ABSTRACT:
A test pattern which is applied to a wafer or mask by electron beam lithophy for measuring proximity effects. The pattern comprises two lines which intersect at a small angle, for example 1.degree. so that the proximity effects of the two lines combine within the angle to displace the angle vertex by an amount much larger than the proximity effect of an isolated line. A calibration scale is provided to measure this enhanced proximity effect by viewing the pattern with an optical microscope.

REFERENCES:
patent: 3094049 (1963-06-01), Snelling
patent: 4264711 (1981-04-01), Greeneich
patent: 4426584 (1984-01-01), Bohlen et al.
patent: 4463265 (1984-07-01), Owen et al.

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