Measurement of photolithographic features

Details Measurement of photolithographic features Measurement of photolithographic features

2005-01-25

2005-01-25

Rosenberger, Richard A. (Department: 2877)

Optics: measuring and testing

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Width or diameter

C356S615000, C250S559240

Reexamination Certificate

active

06847464

ABSTRACT:
A method for estimating a property of a selected feature on a photolithographic mask includes providing a model of an image-acquisition system. The model includes information indicative of the characteristics of the image-acquisition system. The image-acquisition system is used to obtain a measured signal representative of the selected feature. On the basis of the measured signal, and the information provided by the model, a value of the property is estimated for the selected feature.

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patent: 6633831 (2003-10-01), Nikoonahad et al.
Nicholas Doe et al., “Optical Proximity Effects in Sub-micron Photomask CD Metrology”, 16thEuropean Conference on Mask Technology for Integrated Circuits and Microcomponents,SPIE Proceedings, vol. 3996, pp. 139-154 (Feb. 2000).

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